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INTEGRATED CIRCUITS
DATA SHEET
TZA3031AHL; TZA3031BHL; TZA3031U SDH/SONET STM1/OC3 laser drivers
Product specification Supersedes data of 2000 Feb 22 2002 Aug 13
Philips Semiconductors
Product specification
SDH/SONET STM1/OC3 laser drivers
FEATURES * 155 Mbits/s data input, both Current Mode Logic (CML) and Positive Emitter Coupled Logic (PECL) compatible; maximum 800 mV (p-p) * Adaptive laser output control with dual loop, stabilizing optical 1 and 0 levels * Optional external control of laser modulation and biasing currents (non-adaptive) * Automatic laser shutdown * Few external components required * Rise and fall times of 120 ps (typical value) * Jitter <50 mUI (p-p) * RF output current sinking capability of 60 mA * Bias current sinking capability of 90 mA * Power dissipation of 430 mW (typical value) * Low cost LQFP32 5 x 5 plastic package * Single 5 V power supply. TZA3031AHL * Laser alarm output for signalling extremely low and high bias current conditions. TZA3031BHL * Extra STM1 155 Mbits/s loop mode input; both CML and PECL compatible. TZA3031U * Bare die version with combined bias alarm and loop mode functionality. ORDERING INFORMATION TYPE NUMBER TZA3031AHL TZA3031BHL TZA3031U - bare die; 2000 x 2000 x 380 m
TZA3031AHL; TZA3031BHL; TZA3031U
APPLICATIONS * SDH/SONET STM1/OC3 optical transmission systems * SDH/SONET STM1/OC3 optical laser modules. GENERAL DESCRIPTION The TZA3031AHL, TZA3031BHL and TZA3031U are fully integrated laser drivers for STM1/OC3 (155 Mbits/s) systems, incorporating the RF path between the data multiplexer and the laser diode. Since the dual loop bias and modulation control circuits are integrated on the IC, the external component count is low. Only decoupling capacitors and adjustment resistors are required. The TZA3031AHL features an alarm function for signalling extreme bias current conditions. The alarm low and high threshold levels can be adjusted to suit the application using only a resistor or a current Digital-to-Analog Converter (DAC). The TZA3031BHL is provided with an additional RF data input to allow remote system testing (loop mode). The TZA3031U is a bare die version for use in compact laser module designs. The die contains 40 pads and features the combined functionality of the TZA3031AHL and the TZA3031BHL.
PACKAGE NAME LQFP32 DESCRIPTION plastic low profile quad flat package; 32 leads; body 5 x 5 x 1.4 mm VERSION SOT401-1 -
2002 Aug 13
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Philips Semiconductors
Product specification
SDH/SONET STM1/OC3 laser drivers
BLOCK DIAGRAM
TZA3031AHL; TZA3031BHL; TZA3031U
handbook, full pagewidth
ALARM TONE TZERO ALARMLO ALARMHI 26 4 5 21 LASER CONTROL BLOCK data input (differential) 18
2 22 23 13
MONIN ONE ZERO LA LAQ BIAS
DIN DINQ
28 29
CURRENT SWITCH
12 15
TZA3031AHL
19, 20 27, 30 4 VCC(R) VCC(G) VCC(B) ALS
BAND GAP REFERENCE
6
BGAP
7
10
31
1, 3, 8, 9, 11, 14, 16, 17 24, 25, 32 11 GND
MBK844
Fig.1 Block diagram of TZA3031AHL.
handbook, full pagewidth
ENL 26
TONE 4
TZERO 5 LASER CONTROL BLOCK
2 22 23 13
MONIN ONE ZERO LA LAQ BIAS
DIN DINQ DLOOP DLOOPQ
28 29 19 20 BAND GAP REFERENCE 6 MUX CURRENT SWITCH 12 15
BGAP
TZA3031BHL
18, 21 27, 30 4 VCC(R) VCC(G) VCC(B) ALS 7 10 31
1, 3, 8, 9, 11, 14, 16, 17 24, 25, 32 11 GND
MBK843
Fig.2 Block diagram of TZA3031BHL.
2002 Aug 13
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Philips Semiconductors
Product specification
SDH/SONET STM1/OC3 laser drivers
PINNING PIN SYMBOL TZA3031AHL TZA3031BHL GND MONIN GND IGM TONE TZERO BGAP VCC(G) VCC(G) GND GND VCC(B) VCC(B) GND LAQ LA GND BIAS GND GND GND ALARMHI VCC(R) VCC(R) DLOOP VCC(R) DLOOPQ VCC(R) ALARMLO VCC(R) ONE ZERO GND GND ALARM ENL VCC(R) 2002 Aug 13 1 2 3 - 4 5 6 7 - 8 9 10 - 11 12 13 14 15 16 17 - 18 - 19 - 20 - - 21 - 22 23 24 25 26 - 27 1 2 3 - 4 5 6 7 - 8 9 10 - 11 12 13 14 15 16 17 - - 18 - 19 - 20 - - 21 22 23 24 25 - 26 27 TZA3031U 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 - 24 - 25 26 27 - 28 29 30 31 32 33 34 4 ground PAD
TZA3031AHL; TZA3031BHL; TZA3031U
DESCRIPTION
monitor photodiode current input ground not connected connection for external capacitor used for setting optical 1 control loop time constant (optional) connection for external capacitor used for setting optical 0 control loop time constant (optional) connection for external band gap decoupling capacitor supply voltage (green domain); note 1 supply voltage (green domain); note 1 ground ground supply voltage (blue domain); note 2 supply voltage (blue domain); note 2 ground laser modulation output inverted laser modulation output ground laser bias current output ground ground ground maximum bias current alarm reference level input supply voltage (red domain); note 3 supply voltage (red domain); note 3 loop mode data input supply voltage (red domain); note 3 loop mode data input inverted supply voltage (red domain); note 3 minimum bias current alarm reference level input supply voltage (red domain); note 3 optical 1 reference level input optical 0 reference level input ground ground alarm output loop mode enable input supply voltage (red domain); note 3
Philips Semiconductors
Product specification
SDH/SONET STM1/OC3 laser drivers
TZA3031AHL; TZA3031BHL; TZA3031U
PIN SYMBOL TZA3031AHL TZA3031BHL DIN DINQ VCC(R) ALS GND GND Notes 28 29 30 31 32 - 28 29 30 31 32 -
PAD DESCRIPTION TZA3031U 35 36 37 38 39 40 data input data input inverted supply voltage (red domain); note 3 automatic laser shutdown input ground ground
1. Supply voltage for the Monitor PhotoDiode (MPD) input current. 2. Supply voltage for the laser modulation outputs (LA, LAQ). 3. Supply voltage for the data inputs (DIN, DINQ), optical 1 and 0 reference level inputs (ONE, ZERO), and the bias current alarm reference level inputs (ALARMHI, ALARMLO).
27 VCC(R)
30 VCC(R)
29 DINQ
handbook, full pagewidth
26 ALARM
32 GND
25 GND
31 ALS
28 DIN
GND MONIN GND TONE TZERO BGAP VCC(G) GND
1 2 3 4
24 GND 23 ZERO 22 ONE 21 ALARMLO
TZA3031AHL
5 6 7 8 20 VCC(R) 19 VCC(R) 18 ALARMHI 17 GND
VCC(B) 10
GND 11
LAQ 12
LA 13
GND 14
BIAS 15
GND 16
GND
9
MBK846
Fig.3 Pin configuration of TZA3031AHL.
2002 Aug 13
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Philips Semiconductors
Product specification
SDH/SONET STM1/OC3 laser drivers
TZA3031AHL; TZA3031BHL; TZA3031U
27 VCC(R)
30 VCC(R)
29 DINQ
32 GND
26 ENL
31 ALS
28 DIN
handbook, full pagewidth
25 GND
GND MONIN GND TONE TZERO BGAP VCC(G) GND
1 2 3 4 5 6 7 8
24 GND 23 ZERO 22 ONE
TZA3031BHL
21 VCC(R) 20 DLOOPQ 19 DLOOP 18 VCC(R) 17 GND
VCC(B) 10
GND 11
LAQ 12
LA 13
GND 14
BIAS 15
GND 16
GND
9
MBK845
Fig.4 Pin configuration of TZA3031BHL.
FUNCTIONAL DESCRIPTION The TZA3031AHL, TZA3031BHL and TZA3031U laser drivers accept a 155 Mbits/s STM1 Non-Return to Zero (NRZ) input data stream, and generate an output signal with sufficient current to drive a solid state Fabry Perot (FP) or Distributed FeedBack (DFB) laser. They also contain dual loop control circuitry for stabilizing the true laser optical power levels representing logic 1 and logic 0.
The input buffers present a high impedance to the data stream on the differential inputs (pins DIN and DINQ); see Fig.5. The input signal can be at a CML level of approximately 200 mV (p-p) below the supply voltage, or at a PECL level up to 800 mV (p-p). The inputs can be configured to accept CML signals by connecting pins DIN and DINQ to VCC(R) via external 50 pull-up resistors. If PECL compatibility is required, the usual Thevenin termination can be applied.
handbook, full pagewidth
VCC(R) 10 k 10 k
100 DIN, DLOOP
100 DINQ, DLOOPQ
GND
MGS910
Fig.5 DIN/DINQ and DLOOP/DLOOPQ inputs.
2002 Aug 13
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Philips Semiconductors
Product specification
SDH/SONET STM1/OC3 laser drivers
For ECL signals (negative and referenced to ground), the inputs should be AC-coupled to the signal source. If AC-coupling is applied, a constant input signal (either LOW or HIGH) will cause the device to be in an undefined state. To avoid this, it is recommended to apply a slight offset to the input stage. The applied offset must be higher than the specified value in Chapter "Characteristics", but much lower than the applied input voltage swing. The RF path is fully differential and contains a differential preamplifier and a main amplifier. The main amplifier is able to operate at the large peak currents required at the output laser driver stage and is insensitive to supply voltage variations. The output signal from the main amplifier drives a current switch which supplies a guaranteed maximum modulation current of 60 mA to pins LA and LAQ (see Fig.6). The BIAS pin outputs a guaranteed maximum DC bias current of up to 90 mA for adjusting the optical laser output to a level above its light emitting threshold (see Fig.7).
TZA3031AHL; TZA3031BHL; TZA3031U
Automatic laser control A laser with a Monitor PhotoDiode (MPD) is required for the laser control circuit (see application diagrams Figs 18 and 19). The MPD current is proportional to the laser emission and is applied to pin MONIN. The MPD current range is 100 to 1000 A (p-p). The input buffer is optimized to cope with an MPD capacitance of up to 50 pF. To prevent the input buffer from oscillating if the MPD capacitance is low, the capacitance should be increased to the minimum value specified in Chapter "Characteristics", by connecting a capacitor between pin MONIN and VCC(G). DC reference currents are applied to pins ONE and ZERO to set the MPD reference levels for laser HIGH and laser LOW respectively. This is adequately achieved by using resistors to connect VCC(R) to pins ONE and ZERO (see Fig.8), however, current DACs can also be used. The voltages on pins ONE and ZERO are held at a constant level of 1.5 V below VCC(R). The reference current applied to pin ONE is internally multiplied by 16 and the reference current flowing into pin ZERO is internally multiplied by 4. The accuracy of the VCC(R) - 1.5 V voltage at pins ONE and ZERO is described in Section "Accuracy of voltage on inputs: ONE, ZERO, ALARMLO, ALARMHI".
handbook, halfpage
LA
LAQ
TR
TRn
ALS
MGS906
GND
handbook, halfpage VCC(R)
Fig.6 LA and LAQ outputs.
30 k
ONE, ZERO, ALARMLO, ALARMHI
handbook, halfpage
BIAS
50 A
TR
TRn
MGS908
GND
ALS
MGS907
GND
Fig.8 Fig.7 Laser driver bias current output circuit.
ONE, ZERO, ALARMLO and ALARMHI inputs.
2002 Aug 13
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Philips Semiconductors
Product specification
SDH/SONET STM1/OC3 laser drivers
The reference current and the resistor for the optical 1 modulation current control loop is calculated using the following formulae: I ref ( ONE ) 1 = ----- x I MPD(ONE) 16 [A] [] (1) (2)
TZA3031AHL; TZA3031BHL; TZA3031U
Designing the modulation and bias current control loop The optical 1 and 0 current control loop time constants are determined by on-chip capacitances. If the resulting time constants are found to be too small in a specific application, they can be increased by connecting a capacitor between pins TZERO and TONE. The optical 1 modulation current control loop time constant () and bandwidth (B) can be estimated using the following formulae: ONE = ( 40 x 10
- 12
24 1.5 R ONE = ---------- = ----------------------I MPD(ONE) I ONE
The reference current and resistor for the optical 0 bias current control loop is calculated using the following formulae: 1 (3) I ref ( ZERO ) = -- x I MPD(ZERO) [A] 4 6 1.5 R ZERO = ------------- = -------------------------- [ ] I MPD(ZERO) I ZERO (4)
80 x 10 + C TONE ) x --------------------- [ s ] LASER [ Hz ]
3
(5)
1 B ONE = ------------------------2 x ONE
(6)
In these formulae, IMPD(ONE) and IMPD(ZERO) represent the MPD current during an optical 1 and an optical 0 period, respectively. EXAMPLE A laser operates at optical output power levels of 0.3 mW for laser HIGH and 0.03 mW for laser LOW (extinction ratio of 10 dB). Suppose the corresponding MPD currents for this particular laser are 260 and 30 A, respectively. In this example, the reference current flowing into pin ONE is: 1 -6 I ref ( ONE ) = ----- x 260 x 10 = 16.25 A 16 This current can be set using a current source or simply by a resistor of the appropriate value connected between pin ONE and VCC(R). In this example, the resistor is: 1.5 R ONE = -------------------------------- = 92.3 k -6 16.25 x 10 In this example, the reference current at pin ZERO is: 1 -6 I ref ( ZERO ) = -- x 30 x 10 = 7.5 A 4 and can be set using a resistor: 1.5 R ZERO = ------------------------- = 200 k -6 7.5 x 10 It should be noted that the MPD current is stabilized rather than the actual laser optical output power. Any deviations between optical output power and MPD current, known as `tracking errors', cannot be corrected.
LASER B ONE = ------------------------------------------------------------------------------------------------ [ Hz ] - 12 3 2 x ( 40 x 10 + C TONE ) x 80 x 10 The optical 0 bias current control loop time constant and bandwidth can be estimated using the following formulae: ZERO = ( 40 x 10
- 12
50 x 10 + C TZERO ) x --------------------- [ s ] LASER [ Hz ]
3
(7)
1 B ZERO = --------------------------2 x ZERO
(8)
LASER B ZERO = --------------------------------------------------------------------------------------------------- [ Hz ] - 12 3 2 x ( 40 x 10 + C TZERO ) x 50 x 10 The term LASER (dimensionless) in the above formulae is the product of the following two terms: * EO is the electro-optical efficiency which accounts for the steepness of the laser slope characteristic. It defines the rate at which the optical output power increases with modulation current, and is measured in W/A. * R is the MPD responsivity. It determines the amount of MPD current for a given value of optical output power, and is measured in A/W. EXAMPLE A laser with an MPD has the following specifications: PO = 1 mW, Ith = 25 mA, EO = 30 mW/A, R = 500 mA/W. The term Ith is the required threshold current to switch on the laser. If the laser operates just above the threshold level, it may be assumed that EO near the optical 0 level is 50% of EO near the optical 1 level, due to the slope decreasing near the threshold level.
2002 Aug 13
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Philips Semiconductors
Product specification
SDH/SONET STM1/OC3 laser drivers
In this example, the resulting bandwidth for the optical 1 modulation current control loop, without an external capacitor, is: B ONE 30 x 10 x 500 x 10 = -------------------------------------------------------------------- 750 Hz - 12 3 x 80 x 10 2 x 40 x 10
-3 -3
TZA3031AHL; TZA3031BHL; TZA3031U
MGS902
handbook, halfpage
3
I o(mod)(off) (mA)
(1)
The resulting bandwidth for the optical 0 bias current control loop, without an external capacitor, is: 0.5 x 30 x 10 x 500 x 10 B ZERO = ------------------------------------------------------------------------- 600 Hz - 12 3 2 x 40 x 10 x 50 x 10 It is not necessary to add additional capacitance with this type of laser. Control loop data pattern and bit rate dependency The constants in equations (1) and (3) are valid when the data pattern frequently contains a sufficient number of `constant zeroes' and `constant ones'. A single control loop time period (ONE and ZERO) must contain ones and zeros for at least approximately 6 ns. In practice, the optical extinction ratio increases if the bit rate increases. Therefore, it is important to use the actual data patterns and bit rate of the final application circuit for adjusting the optical levels. The laser driver peak detectors are able to track MPD output current overshoot and undershoot conditions. Unfortunately, these conditions affect the ability of the IC to correctly interpret the high and low level MPD current. In particular, the occurrence of undershoot can have a markedly adverse effect on the interpretation of the low level MPD current. Additional bias by modulation `off' current Although during operation, the full modulation current switches between outputs LA and LAQ, a small amount of modulation current continues to flow through the inactive pin. For example, when the laser, whose cathode is connected to LA, is in the `dark' part of its operating cycle (logic 0), some of the modulation `off' current flows through LA while most of the current flows through LAQ. This value Io(mod)(off) is effectively added to the bias current and is subtracted from the modulation current. Fortunately, the value correlates closely with the magnitude of the modulation current. Therefore, applications requiring low bias and low modulation are less affected. Figure 9 shows the modulation `off' current as a function of the modulation `on' current.
-3 -3
2
1
(2)
0 0 20 40 60 I o(mod)(on) (mA)
(1) Worst case operation (Tj = 125 C, VCC = 5.5 V and worst case parameter processes). (2) Typical operation.
Fig.9 Io(mod)(off) as a function of Io(mod)(on).
Monitoring the bias and modulation current Although not recommended, the bias and modulation currents generated by the laser driver can be monitored by measuring the voltages on pins TZERO and TONE, respectively (see Fig.10). The relationship between these voltages and the corresponding currents are given as transconductance values and are specified in Chapter "Characteristics". The voltages on pins TZERO and TONE range from 1.4 to 3.4 V. Any connection to these pins should have a very high impedance value. It is mandatory to use a CMOS buffer or an amplifier with an input impedance higher than 100 G and with an extremely low input leakage current (pA).
2002 Aug 13
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Philips Semiconductors
Product specification
SDH/SONET STM1/OC3 laser drivers
TZA3031AHL; TZA3031BHL; TZA3031U
Manual laser override The automatic laser control function can be overridden by connecting voltage sources to pins TZERO and TONE to take direct control of the current sources for bias and modulation respectively. The control voltages should range from 1.4 to 3.4 V to swing the modulation current over the range 1 to 60 mA and the bias current over the range 1 to 90 mA. These current ranges are guaranteed. Due to the tolerance range in the manufacturing process, some devices may have higher current values than those specified, as shown in Figs 12 and 13. Both figures show that temperature changes cause a slight tilting of the linear characteristic around an input voltage of 2.4 V. Consequently, the manually controlled current level is most insensitive to temperature variations at around this value. Bias and modulation currents in excess of the specified range are not supported and should be avoided. Currents into or out of pins TZERO and TONE in excess of 10 A must be avoided to prevent damage to the circuit.
TZERO, TONE handbook, halfpage LINEAR VOLTAGE TO CURRENT CONVERTER <1 nA 2.4 V <1 nA 40 pF
MGS905
GND
Fig.10 TZERO and TONE internal configuration.
Automatic laser shut-down and laser slow start The laser modulation and bias currents can be rapidly switched off when a HIGH level (CMOS) is applied to pin ALS. This function allows the circuit to be shut-down in the event of an optical system malfunction. A 25 k pull-down resistor defaults pin ALS to the non active state (see Fig.11). When a LOW level is applied to pin ALS, the modulation and bias currents slowly increase to the desired values at the typical time constants of ONE and ZERO, respectively. This can be used to slow-start the laser.
handbook, halfpage
VCC(R) 100 100
ALS 25 k
MGS911
GND
Fig.11 ALS input.
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Philips Semiconductors
Product specification
SDH/SONET STM1/OC3 laser drivers
TZA3031AHL; TZA3031BHL; TZA3031U
handbook, full pagewidth
160
MGS904
I o(mod) (mA) 120
(1)
80
(2) (3) (4) (5)
specified range 40
0 1.4
1.9
2.4
2.9
3.4
VTONE (V)
3.9
(1) (2) (3) (4) (5)
Tj = 25 C (device with characteristics at upper limit of manufacturing tolerance range). Tj = 25 C (typical device). Tj = -40 C (typical device). Tj = 125 C (typical device). Tj = 25 C (device with characteristics at lower limit of manufacturing tolerance range).
Fig.12 Modulation current with variation in Tj and tolerance range in the manufacturing process.
2002 Aug 13
11
Philips Semiconductors
Product specification
SDH/SONET STM1/OC3 laser drivers
TZA3031AHL; TZA3031BHL; TZA3031U
handbook, full pagewidth
160
MGS903
I O(BIAS) (mA) 120
(1)
(2) (3) (4) (5)
80 specified range
40
0 1.4
1.9
2.4
2.9
3.4
VTZERO (V)
3.9
(1) (2) (3) (4) (5)
Tj = 25 C (device with characteristics at upper limit of manufacturing tolerance range). Tj = 25 C (typical device). Tj = -40 C (typical device). Tj = 125 C (typical device). Tj = 25 C (device with characteristics at lower limit of manufacturing tolerance range).
Fig.13 Bias current with variation in Tj and tolerance range in the manufacturing process.
2002 Aug 13
12
Philips Semiconductors
Product specification
SDH/SONET STM1/OC3 laser drivers
Bias alarm for TZA3031AHL The bias current alarm circuit detects whenever the bias current is outside a predefined range, and generates a flag. This feature can detect excessive bias current due to laser ageing or laser malfunctioning. The current applied to pin ALARMHI should be the maximum permitted bias current value attenuated by a ratio of 1:1500. The current applied to pin ALARMLO should be the minimum permitted bias current value attenuated by a ratio of 1:300. Like the reference currents for the laser current control loop, the alarm reference currents can be set by connecting external resistors between VCC(R) and pins ALARMHI and ALARMLO (see Fig.8). The resistor values can be calculated using the following formulae: 1.5 x 1500 R ALARMHI = --------------------------------- [ ] (9) I O ( BIAS ) ( max ) 1.5 x 300 R ALARMLO = ------------------------------I O ( BIAS ) ( min ) [] (10)
TZA3031AHL; TZA3031BHL; TZA3031U
handbook, halfpage
VCC(R)
20 ALARM 43
MGS909
GND
Example: The following reference currents are required to limit the bias current range from 6 to 90 mA: 6 x 10 I ALARMLO = -------------------- = 20 A and 300 90 x 10 I ALARMHI = ------------------------ = 60 A 1500 The corresponding resistor values are: 1.5 x 1500 R ALARMHI = --------------------------- = 25 k and -3 90 x 10 1.5 x 300 R ALARMLO = ----------------------- = 75 k -3 6 x 10 If the alarm condition is true, the voltage on pin ALARM (see Fig.14) goes to a HIGH level (CMOS). This signal could be used, for example, to drive pin ALS to disable the laser driver; the signal to pin ALS has to be latched to prevent oscillation. A hysteresis of approximately 10% is applied to both alarm functions. The attenuation ratios of 1:300 and 1:1500 are valid if the bias current rises above the reference current levels. If the bias current decreases, the ratios are 10% lower.
-3 -3
Fig.14 ALARM output.
Accuracy of voltage on inputs: ONE, ZERO, ALARMLO, ALARMHI It is important to consider the accuracy of the 1.5 V level with respect to VCC(R) on pins ONE and ZERO if resistors are used to set the reference currents. Although this value is independent of VCC(R), deviations from 1.5 V can be caused by: * Input current: At Tj = 25 C, the voltage between pin and VCC varies from 1.58 V at an input current of 6 A, down to 1.45 V at 65 A and 1.41 V at 100 A. The range between 65 A and 100 A is only specified for ALARMLO. In the application, the input current is virtually fixed, so this variation has little effect. * Variation in batch and individual device characteristics, not exceeding 2% from the nominal product: This variation can be compensated for where devices in the application are individually trimmed. * Temperature: The variation in Tj is shown in Fig.15. At 30 A (middle of the specified range) the total variation in Tj is <1%, at 65 A it is <2% and at 6 A it is <3%.
2002 Aug 13
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Philips Semiconductors
Product specification
SDH/SONET STM1/OC3 laser drivers
TZA3031AHL; TZA3031BHL; TZA3031U
handbook, full pagewidth V (1)
-1.65
MGS901
ref (V) -1.60
(2) (3) (4)
Iref = 6 A
-1.55
(2)
-1.50
(3) (4)
Iref =
30 A
-1.45
(2) (3)
Iref =
65 A
-1.40
(4)
-1.35 -50
-40
0
50
100
Tj (C)
125
150
(1) (2) (3) (4)
Referenced to VCC(R). Upper limit of manufacturing tolerance range. Nominal product. Lower limit of manufacturing tolerance range.
Fig.15 Vref on pins ONE, ZERO, ALARMLO and ALARMHI with variation in Tj and Iref.
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Philips Semiconductors
Product specification
SDH/SONET STM1/OC3 laser drivers
Loop mode for TZA3031BHL The loop mode allows the total system application to be tested. It allows for uninhibited optical transmission through the fibre front-end (from the MPD through the transimpedance stage and the data and clock recovery unit, to the laser driver and via the laser back to the fibre). Note that the optical receiver used in conjunction with the TZA3031BHL must have a loop mode output in order to complete the test loop. The loop mode is selected by a HIGH level on pin ENL. By default, pin ENL is pulled to a LOW level by a 25 k pull-down resistor (see Fig.16).
TZA3031AHL; TZA3031BHL; TZA3031U
To maximize power supply isolation, the cathode of the MPD should be connected to VCC(G) and the anode of the laser diode should be connected to VCC(B). It is recommended that the laser diode anode is also connected to a separate decoupling capacitor C9. Generally, the inverted laser modulation output (pin LAQ) is not used. To correctly balance the output stage, an equalization network (Z1) with an impedance comparable to the laser diode is connected between pin LAQ and VCC(B). All external components should be surface mounted devices, preferably of size 0603 or smaller. The components must be mounted as close to the IC as possible. It is especially recommended to mount the following components very close to the IC: * Power supply decoupling capacitors C2, C3 and C4 * Input matching network on pins DIN, DINQ, DLOOP and DLOOPQ * Capacitor C5 on pin MONIN * Output matching network Z1 at the unused output * The laser.
handbook, halfpage
VCC(R) 600
ENL 25 k
Bare die ground
MGS912
GND
In addition to the separate VCC domains, the bare die contains three corresponding ground (GND) domains. Isolation between the GND domains is limited due to the finite substrate conductance. Mount the die preferably on a large and highly conductive grounded die pad. All GND pads must be bonded to the die pad. The external ground is thus ideally combined with the die ground to avoid ground bounce problems. Layout recommendations Layout recommendations for the TZA3031AHL and TZA3031BHL can be found in application note "AN98090 Fiber optic transceiverboard STM1/4/8, OC3,12,24, FC/GE".
Fig.16 ENL input.
Power supply connections Refer to application diagrams Figs 18 and 19. Three separate supply domains (labelled VCC(G), VCC(B), and VCC(R)) provide isolation between the MPD current input, the high-current outputs, and the PECL or CML inputs. Each supply domain should be connected to a central VCC via separate filters as shown in Figs 18 and 19. All supply pins must be connected. The voltage supply levels should be equal to, and in accordance with, the values specified in Chapter "Characteristics".
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Philips Semiconductors
Product specification
SDH/SONET STM1/OC3 laser drivers
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL VCC Vn supply voltage DC voltage on pin MONIN pins TONE and TZERO pin BGAP pin BIAS pins LA and LAQ pin ALS pins ONE and ZERO pins DIN and DINQ pin ALARM (TZA3031AHL) pins ALARMHI and ALARMLO (TZA3031AHL) pins DLOOP and DLOOPQ (TZA3031BHL) pin ENL (TZA3031BHL) In DC current on pin MONIN pins TONE and TZERO pin BGAP pin BIAS pins LA and LAQ pin ALS pins ONE and ZERO pins DIN and DINQ pin ALARM (TZA3031AHL) pins ALARMHI and ALARMLO (TZA3031AHL) pins DLOOP and DLOOPQ (TZA3031BHL) pin ENL (TZA3031BHL) Tamb Tj Tstg ambient temperature junction temperature storage temperature PARAMETER
TZA3031AHL; TZA3031BHL; TZA3031U
MIN. -0.5 1.3 -0.5 -0.5 -0.5 1.3 -0.5 -0.5 -0.5 -0.5 -0.5 -0.5 -0.5 -0.5 -0.5 -2.0 -0.5 -0.5 -0.5 -0.5 -0.5 -0.5 -0.5 -0.5 -0.5 -40 -40 -65 +6
MAX. V V V V V V V V V V V V V
UNIT
VCC + 0.5 VCC + 0.5 +3.2 VCC + 0.5 VCC + 0.5 VCC + 0.5 VCC + 0.5 VCC + 0.5 VCC + 0.5 VCC + 0.5 VCC + 0.5 VCC + 0.5 +2.5 +0.5 +2.5 +200 +100 +0.5 +0.5 +0.5 +10 +0.5 +0.5 +0.5 +85 +125 +150
mA mA mA mA mA mA mA mA mA mA mA mA C C C
THERMAL CHARACTERISTICS SYMBOL Rth(j-s) Rth(j-c) PARAMETER thermal resistance from junction to solder point thermal resistance from junction to case VALUE 15 23 UNIT K/W K/W
2002 Aug 13
16
Philips Semiconductors
Product specification
SDH/SONET STM1/OC3 laser drivers
TZA3031AHL; TZA3031BHL; TZA3031U
CHARACTERISTICS VCC = 4.5 to 5.5 V; Tamb = -40 to +85 C; all voltages measured with respect to GND. SYMBOL Supplies VCC ICC(R) ICC(G) ICC(B) ICC(tot) Ptot supply voltage supply current (R) supply current (G) supply current (B) total supply current total power dissipation ALS LOW; note 1 ALS HIGH ALS LOW; note 1 ALS HIGH ALS LOW; note 2 ALS HIGH; note 2 4.5 - 12 20 - 32 12 145 50 5.0 4 18 41 3 63 25 430 125 5.5 10 26 65 5 101 41 925 225 V mA mA mA mA mA mA mW mW PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
Data inputs: pins DIN and DINQ (and pins DLOOP and DLOOPQ on TZA3031BHL); see Fig.17 Vi(p-p) VIO VI(min) VI(max) Zi input voltage (peak-to-peak value) input offset voltage minimum input voltage maximum input voltage input impedance for low frequencies; single-ended single-ended 100 -25 VCC(R) - 2 - 7 250 - - - 10 800 +25 - 13 mV mV V k
VCC(R) + 0.25 V
CMOS inputs: pin ALS (and pin ENL on TZA3031BHL) VIL VIH Rpd(ALS) Rpd(ENL) LOW-level input voltage HIGH-level input voltage internal pull-down resistance on pin ALS internal pull-down resistance on pin ENL IOH = -200 A IOH = 200 A - 3 21 15 - - 25.5 25 2 - 30 35 V V k k
CMOS output: pin ALARM (on TZA3031AHL) VOL VOH VI IMPD CMPD LOW-level output voltage HIGH-level output voltage 0 VCC - 0.2 1.2 laser optical 0 laser optical 1 note 3 24 96 30 - - 1.8 - - - 0.2 VCC 2.4 260 1040 50 V V
Monitor photodiode input: pin MONIN DC input voltage monitor photodiode current monitor photodiode capacitance V A A pF
2002 Aug 13
17
Philips Semiconductors
Product specification
SDH/SONET STM1/OC3 laser drivers
TZA3031AHL; TZA3031BHL; TZA3031U
MIN. TYP. - -1.5 16 - -1.5 4 MAX. UNIT A V - A V -
SYMBOL
PARAMETER
CONDITIONS
Control loop reference current inputs: pins ONE and ZERO Iref(ONE) Vref(ONE) (ONE) Iref(ZERO) Vref(ZERO) (ZERO) reference current on pin ONE reference voltage on pin ONE note 4 referenced to VCC(R); note 5 6 - - 6 - - 65 - - 65 - -
attenuation ratio of Iref(ONE) note 6 to IMPD(ONE) reference current on pin ZERO reference voltage on pin ZERO attenuation ratio of Iref(ZERO) to IMPD(ZERO) voltage on pin TONE transconductance of pin TONE voltage on pin TZERO transconductance of pin TZERO note 4 referenced to VCC(R); note 5 note 6
Control loop time constants: pins TONE and TZERO VTONE gm(TONE) VTZERO gm(TZERO) floating output note 7 floating output note 8 1.4 60 1.4 100 - 95 - 145 3.4 130 3.4 190 V mA/V V mA/V
Laser modulation current outputs: pins LA and LAQ Io(mod)(on) Io(mod)(off) Io(mod)(ALS) VO tr tf Jo(p-p) modulation output current (active pin) modulation output current (inactive pin) output current during laser shutdown output voltage current rise time current fall time intrinsic electrical output jitter (peak-to-peak value) note 10 note 10 note 11 note 9 Io(mod)(on) = 30mA Io(mod)(on) = 60mA 2.5 - - - 2 - - - - - - - - 120 120 - 60 0.5 2.8 10 5 300 300 50 mA mA mA A V ps ps mUI
Laser bias current output: pin BIAS IO(BIAS) IO(BIAS)(ALS) tres(off) VO(BIAS) bias output current output current during laser shutdown response time after laser shutdown bias output voltage IO(BIAS) = 90 mA; note 13 note 12 2.8 - - 1 - - - - 90 10 1 5 mA A s V
2002 Aug 13
18
Philips Semiconductors
Product specification
SDH/SONET STM1/OC3 laser drivers
TZA3031AHL; TZA3031BHL; TZA3031U
MIN. TYP. - -1.5 315 10 - -1.5 1600 10 MAX. UNIT A V
SYMBOL
PARAMETER
CONDITIONS
Alarm reference current inputs: pins ALARMHI and ALARMLO (TZA3031AHL) Iref(ALARMLO) Vref(ALARMLO) (ALARMLO) IO(BIAS)(min)(hys) Iref(ALARMHI) Vref(ALARMHI) (ALARMHI) reference current on pin ALARMLO reference voltage on pin ALARMLO attenuation ratio of Iref(ALARMLO) to IO(BIAS)(min) minimum bias current detection hysteresis reference current on pin ALARMHI reference voltage on pin ALARMHI attenuation ratio of Iref(ALARMHI) to IO(BIAS)(max) note 14 referenced to VCC(R) note 15 note 14 referenced to VCC(R) note 15 6 - 200 7.5 6 - 1300 7.5 100 - 400 15 65 - 1800 15 % % A V
IO(BIAS)(max)(hys) maximum bias current detection hysteresis Reference voltage output: pin BGAP VO Notes 1. Supply current: output voltage
1.165
1.20
1.235
A
a) The values do not include the modulation and bias currents through pins LA, LAQ and BIAS. b) Minimum value refers to VTONE = 1.4 V at Io(mod)(min) and VTZERO = 1.4 V at IO(BIAS)(min). c) Maximum value refers to VTONE = 3.4 V at Io(mod)(max) and VTZERO = 3.4 V at IO(BIAS)(max). d) A first order estimate of the typical value of ICC(tot) as a function of Tj, Io(mod), and IO(BIAS) is: T j [ C ] ICC(tot) = 55.6 mA + 0.0015 x I O ( BIAS ) [ mA ] x I o ( mod ) ( on ) [ mA ] x 1 - 0.026 x ---------------- . - 25 2. Power dissipation: a) The value for Ptot includes the modulation and bias currents through pins LA, LAQ and BIAS. b) The minimum value for Ptot is the on-chip dissipation when VTONE = 1.4 V at Io(mod)(min), VLA = VLAQ = 2 V, VTZERO = 1.4 V at IO(BIAS)(min), VO(BIAS) = 1 V, and parameter processes are at a minimum. c) The maximum value for Ptot is the on-chip dissipation when VTONE = 3.4 V at Io(mod)(max), VLA = VLAQ = 2 V, VTZERO = 3.4 V at IO(BIAS)(max), VO(BIAS) = 1 V, and parameter processes are at a maximum. d) Ptot = ICC(tot) x VCC + IO(BIAS) x VO(BIAS) + ILA x VLA with Io(mod)(on) flowing through pin LA. 3. The minimum value of the capacitance on pin MONIN is required to prevent instability. 4. The reference currents can be set by connecting external resistors between VCC and pins ONE and ZERO (see Section "Automatic laser control"). The corresponding MPD current range for optical 1 is from 96 to 1040 A. The MPD current range for optical 0 is from 24 to 260 A. 5. See Section "Accuracy of voltage on inputs: ONE, ZERO, ALARMLO, ALARMHI". 6. See Section "Automatic laser control". 7. The specified transconductance is the ratio between the modulation current on pins LA or LAQ and the voltage on pin TONE, under small signal conditions. 2002 Aug 13 19
Philips Semiconductors
Product specification
SDH/SONET STM1/OC3 laser drivers
TZA3031AHL; TZA3031BHL; TZA3031U
8. The specified transconductance is the ratio between the bias current on pin BIAS and the voltage on pin TZERO, under small signal conditions. 9. These are the guaranteed values; the lowest attainable output current will always be lower than 2.5 mA, and the highest output current will always be higher than 60 mA. 10. The voltage rise and fall times (20% to 80%) can have larger values due to capacitive effects. Specifications are guaranteed by design and characterization. Each device is tested at full operating speed to guarantee RF functionality. 11. Measured in a frequency band from 250 kHz to 5 MHz, according to "ITU-T Recommendation G.813". The electrically generated (current) jitter is assumed to be less than 50% of the optical output jitter. The specification is guaranteed by design. 12. These are the guaranteed values; the lowest output current will always be less than 2.8 mA and the highest output current will always be more than 90 mA. 13. The response time is defined as the delay between the onset of the ramp on pin ALS (at 10% of the HIGH level) and the extinction of the bias current (at 10% of the original value). 14. The reference currents can be set by connecting a resistor between pin ALARMLO and VCC(R) and between pin ALARMHI and VCC(R); for detailed information, see Section "Bias alarm for TZA3031AHL". The corresponding low-bias threshold range is 1.8 to 19.5 mA. The high-bias threshold range is 9 to 97.5 mA. 15. See Section "Bias alarm for TZA3031AHL".
handbook, full pagewidth
VI(max) VCC(R)
Vi(p-p) VIO VI(min)
MGK274
Fig.17 Logic level symbol definitions for data inputs.
2002 Aug 13
20
Philips Semiconductors
Product specification
SDH/SONET STM1/OC3 laser drivers
APPLICATION INFORMATION
TZA3031AHL; TZA3031BHL; TZA3031U
(1)
handbook, full pagewidth
C2 22 nF
(1)
VCC C1 1 F
(1)
C3 22 nF
C4 22 nF
4 C5(2) MONIN C6(3) 2
data inputs normal mode (CML/PECL compatible) DINQ 29 DIN ALARM 26 23 22 ZERO ONE R1(5) R2(5) R3(6) R4(6)
VCC(G) VCC(B) VCC(R) ALS 7 10 19, 20, 27, 30 31
28
TONE
4 5 6 1, 3, 8, 9, 11, 14, 16, 17, 24, 25, 32 GND 11
C7(4) TZERO C8 22 nF BGAP
TZA3031AHL
21 18 15 BIAS R5 18 L1 C9
MBK848
ALARMLO ALARMHI
13 LA
12 LAQ Z1(7)
MPD
laser
(1) (2) (3) (4) (5) (6) (7)
Ferrite bead e.g. Murata BLM31A601S. C5 is required to meet the minimum capacitance value on pin MONIN (optional, see Section "Automatic laser control"). C6 enhances modulation control loop time constant (optional). C7 enhances bias control loop time constant (optional). R1 and R2 are used for setting optical 0 and optical 1 reference currents (see Section "Automatic laser control"). R3 and R4 are used for setting minimum and maximum bias currents (see Section "Bias alarm for TZA3031AHL"). Z1 is required for balancing the output stage (see Section "Power supply connections").
Fig.18 Application diagram showing the TZA3031AHL configured for 155 Mbits/s (STM1/OC3).
2002 Aug 13
21
Philips Semiconductors
Product specification
SDH/SONET STM1/OC3 laser drivers
TZA3031AHL; TZA3031BHL; TZA3031U
(1)
handbook, full pagewidth
C2 22 nF
(1)
VCC C1 1 F
(1)
C3 22 nF
C4 22 nF
4 C5(2) MONIN C6(3) 2
data inputs normal mode (CML/PECL compatible) DINQ 29 DIN ENL 26 23 22 ZERO ONE R1(5) R2(5)
VCC(G) VCC(B) VCC(R) ALS 7 10 18, 21, 27, 30 31
28
TONE
4 5 6 1, 3, 8, 9, 11, 14, 16, 17, 24, 25, 32 GND 11
C7(4) TZERO C8 22 nF BGAP
TZA3031BHL
20 19 15 BIAS R3 18 L1 C9
MBK847
DLOOPQ DLOOP
loop mode inputs (CML/PECL compatible)
13 LA
12 LAQ Z1(6)
MPD
laser
(1) (2) (3) (4)
Ferrite bead e.g. Murata BLM31A601S. C5 is required to meet the minimum capacitance value on pin MONIN (optional, see Section "Automatic laser control"). C6 enhances modulation control loop time constant (optional). C7 enhances bias control loop time constant (optional).
(5) R1 and R2 are used for setting optical 0 and optical 1 reference currents (see Section "Automatic laser control"). (6) Z1 is required for balancing the output stage (see Section "Power supply connections").
Fig.19 Application diagram showing the TZA3031BHL configured for 155 Mbits/s (STM1/OC3).
2002 Aug 13
22
Philips Semiconductors
Product specification
SDH/SONET STM1/OC3 laser drivers
BONDING PAD LOCATIONS COORDINATES(1) SYMBOL GND MONIN GND IGM TONE TZERO BGAP VCC(G) VCC(G) GND GND VCC(B) VCC(B) GND LAQ LA GND BIAS GND GND GND ALARMHI PAD x 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 -664 -524 -367 -227 -70 +87 +244 +384 +524 +664 +910 +910 +910 +910 +910 +910 +910 +910 +910 +910 +681 +541 y -910 -910 -910 -910 -910 -910 -910 -910 -910 -910 -630 -490 -350 -210 -70 +70 +210 +350 +490 +630 +910 +910 VCC(R) DLOOP DLOOPQ VCC(R)
TZA3031AHL; TZA3031BHL; TZA3031U
COORDINATES(1) SYMBOL PAD x 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 +384 +227 +87 -70 -210 -367 -524 -681 -910 -910 -910 -910 -910 -910 -910 -910 -910 -910 y +910 +910 +910 +910 +910 +910 +910 +910 +681 +541 +384 +227 +70 -70 -227 -367 -551 -664
ALARMLO ONE ZERO GND GND ALARM ENL VCC(R) DIN DINQ VCC(R) ALS GND GND Note
1. All x and y coordinates represent the position of the centre of the pad in m with respect to the centre of the die (see Fig.20).
2002 Aug 13
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Philips Semiconductors
Product specification
SDH/SONET STM1/OC3 laser drivers
TZA3031AHL; TZA3031BHL; TZA3031U
handbook, full pagewidth
2 mm(1) ALARMLO ZERO ALARMHI
22
DLOOPQ
DLOOP
VCC(R)
VCC(R)
GND
30
29
28
ONE
27
26
25
24
23
21
GND ALARM ENL VCC(R) DIN DINQ VCC(R) ALS GND GND
31 32 33 34 35 36 37 38 39 40
GND
20 19 18 17
GND GND BIAS GND LA LAQ GND VCC(B) VCC(B) GND 2 mm(1)
x 0 0 y
16 15 14 13
TZA3031U
12 11
1
2
3
4
5
6
7
8
9
10
GND
MONIN
GND
IGM
TONE
VCC(G)
VCC(G)
TZERO
BGAP
GND
MBK849
(1) Typical value.
Fig.20 Bonding pad locations of TZA3031U.
Table 1
Physical characteristics of bare die VALUE 2.1 m PSG (PhosphoSilicate Glass) on top of 0.7 m silicon nitride minimum dimension of exposed metallization is 90 x 90 m (pad size = 100 x 100 m) 1.2 m AlCu (1% Cu) 380 m nominal 2.000 x 2.000 mm (4.000 mm2) silicon; electrically connected to GND potential through substrate contacts <430 C; glue is recommended for attaching die <15 s
PARAMETER Glass passivation Bonding pad dimension Metallization Thickness Size Backing Attach temperature Attach time
2002 Aug 13
24
Philips Semiconductors
Product specification
SDH/SONET STM1/OC3 laser drivers
PACKAGE OUTLINE
TZA3031AHL; TZA3031BHL; TZA3031U
LQFP32: plastic low profile quad flat package; 32 leads; body 5 x 5 x 1.4 mm
SOT401-1
c y X
24 25
17 16 ZE
A
e E HE wM bp 32 1 8 9 L detail X Lp A A2 A1 pin 1 index (A 3)
e bp D HD
ZD wM B
vM A
vM B
0
2.5 scale
5 mm
DIMENSIONS (mm are the original dimensions) UNIT mm A max. 1.60 A1 0.15 0.05 A2 1.5 1.3 A3 0.25 bp 0.27 0.17 c 0.18 0.12 D (1) 5.1 4.9 E (1) 5.1 4.9 e 0.5 HD 7.15 6.85 HE 7.15 6.85 L 1.0 Lp 0.75 0.45 v 0.2 w 0.12 y 0.1 Z D (1) Z E (1) 0.95 0.55 0.95 0.55 7 0o
o
Note 1. Plastic or metal protrusions of 0.25 mm maximum per side are not included. OUTLINE VERSION SOT401-1 REFERENCES IEC 136E01 JEDEC MS-026 EIAJ EUROPEAN PROJECTION
ISSUE DATE 99-12-27 00-01-19
2002 Aug 13
25
Philips Semiconductors
Product specification
SDH/SONET STM1/OC3 laser drivers
SOLDERING Introduction to soldering surface mount packages This text gives a very brief insight to a complex technology. A more in-depth account of soldering ICs can be found in our "Data Handbook IC26; Integrated Circuit Packages" (document order number 9398 652 90011). There is no soldering method that is ideal for all surface mount IC packages. Wave soldering can still be used for certain surface mount ICs, but it is not suitable for fine pitch SMDs. In these situations reflow soldering is recommended. Reflow soldering Reflow soldering requires solder paste (a suspension of fine solder particles, flux and binding agent) to be applied to the printed-circuit board by screen printing, stencilling or pressure-syringe dispensing before package placement. Several methods exist for reflowing; for example, convection or convection/infrared heating in a conveyor type oven. Throughput times (preheating, soldering and cooling) vary between 100 and 200 seconds depending on heating method. Typical reflow peak temperatures range from 215 to 250 C. The top-surface temperature of the packages should preferable be kept below 220 C for thick/large packages, and below 235 C for small/thin packages. Wave soldering Conventional single wave soldering is not recommended for surface mount devices (SMDs) or printed-circuit boards with a high component density, as solder bridging and non-wetting can present major problems. To overcome these problems the double-wave soldering method was specifically developed.
TZA3031AHL; TZA3031BHL; TZA3031U
If wave soldering is used the following conditions must be observed for optimal results: * Use a double-wave soldering method comprising a turbulent wave with high upward pressure followed by a smooth laminar wave. * For packages with leads on two sides and a pitch (e): - larger than or equal to 1.27 mm, the footprint longitudinal axis is preferred to be parallel to the transport direction of the printed-circuit board; - smaller than 1.27 mm, the footprint longitudinal axis must be parallel to the transport direction of the printed-circuit board. The footprint must incorporate solder thieves at the downstream end. * For packages with leads on four sides, the footprint must be placed at a 45 angle to the transport direction of the printed-circuit board. The footprint must incorporate solder thieves downstream and at the side corners. During placement and before soldering, the package must be fixed with a droplet of adhesive. The adhesive can be applied by screen printing, pin transfer or syringe dispensing. The package can be soldered after the adhesive is cured. Typical dwell time is 4 seconds at 250 C. A mildly-activated flux will eliminate the need for removal of corrosive residues in most applications. Manual soldering Fix the component by first soldering two diagonally-opposite end leads. Use a low voltage (24 V or less) soldering iron applied to the flat part of the lead. Contact time must be limited to 10 seconds at up to 300 C. When using a dedicated tool, all other leads can be soldered in one operation within 2 to 5 seconds between 270 and 320 C.
2002 Aug 13
26
Philips Semiconductors
Product specification
SDH/SONET STM1/OC3 laser drivers
TZA3031AHL; TZA3031BHL; TZA3031U
Suitability of surface mount IC packages for wave and reflow soldering methods PACKAGE(1) BGA, LBGA, LFBGA, SQFP, TFBGA, VFBGA HBCC, HBGA, HLQFP, HSQFP, HSOP, HTQFP, HTSSOP, HVQFN, HVSON, SMS PLCC(4), SO, SOJ LQFP, QFP, TQFP SSOP, TSSOP, VSO Notes 1. For more detailed information on the BGA packages refer to the "(LF)BGA Application Note" (AN01026); order a copy from your Philips Semiconductors sales office. 2. All surface mount (SMD) packages are moisture sensitive. Depending upon the moisture content, the maximum temperature (with respect to time) and body size of the package, there is a risk that internal or external package cracks may occur due to vaporization of the moisture in them (the so called popcorn effect). For details, refer to the Drypack information in the "Data Handbook IC26; Integrated Circuit Packages; Section: Packing Methods". 3. These packages are not suitable for wave soldering. On versions with the heatsink on the bottom side, the solder cannot penetrate between the printed-circuit board and the heatsink. On versions with the heatsink on the top side, the solder might be deposited on the heatsink surface. 4. If wave soldering is considered, then the package must be placed at a 45 angle to the solder wave direction. The package footprint must incorporate solder thieves downstream and at the side corners. 5. Wave soldering is suitable for LQFP, TQFP and QFP packages with a pitch (e) larger than 0.8 mm; it is definitely not suitable for packages with a pitch (e) equal to or smaller than 0.65 mm. 6. Wave soldering is suitable for SSOP and TSSOP packages with a pitch (e) equal to or larger than 0.65 mm; it is definitely not suitable for packages with a pitch (e) equal to or smaller than 0.5 mm. not suitable not suitable(3) SOLDERING METHOD WAVE REFLOW(2) suitable suitable suitable suitable suitable
suitable not not recommended(4)(5) recommended(6)
2002 Aug 13
27
Philips Semiconductors
Product specification
SDH/SONET STM1/OC3 laser drivers
DATA SHEET STATUS DATA SHEET STATUS(1) Objective data PRODUCT STATUS(2) Development
TZA3031AHL; TZA3031BHL; TZA3031U
DEFINITIONS This data sheet contains data from the objective specification for product development. Philips Semiconductors reserves the right to change the specification in any manner without notice. This data sheet contains data from the preliminary specification. Supplementary data will be published at a later date. Philips Semiconductors reserves the right to change the specification without notice, in order to improve the design and supply the best possible product. This data sheet contains data from the product specification. Philips Semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. Changes will be communicated according to the Customer Product/Process Change Notification (CPCN) procedure SNW-SQ-650A.
Preliminary data
Qualification
Product data
Production
Notes 1. Please consult the most recently issued data sheet before initiating or completing a design. 2. The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com. DEFINITIONS Short-form specification The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Limiting values definition Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or modification. DISCLAIMERS Life support applications These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors customers using or selling these products 2002 Aug 13 28 for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application. Right to make changes Philips Semiconductors reserves the right to make changes, without notice, in the products, including circuits, standard cells, and/or software, described or contained herein in order to improve design and/or performance. Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no licence or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified. Bare die All die are tested and are guaranteed to comply with all data sheet limits up to the point of wafer sawing for a period of ninety (90) days from the date of Philips' delivery. If there are data sheet limits not guaranteed, these will be separately indicated in the data sheet. There are no post packing tests performed on individual die or wafer. Philips Semiconductors has no control of third party procedures in the sawing, handling, packing or assembly of the die. Accordingly, Philips Semiconductors assumes no liability for device functionality or performance of the die or systems after third party sawing, handling, packing or assembly of the die. It is the responsibility of the customer to test and qualify their application in which the die is used.
Philips Semiconductors
Product specification
SDH/SONET STM1/OC3 laser drivers
NOTES
TZA3031AHL; TZA3031BHL; TZA3031U
2002 Aug 13
29
Philips Semiconductors
Product specification
SDH/SONET STM1/OC3 laser drivers
NOTES
TZA3031AHL; TZA3031BHL; TZA3031U
2002 Aug 13
30
Philips Semiconductors
Product specification
SDH/SONET STM1/OC3 laser drivers
NOTES
TZA3031AHL; TZA3031BHL; TZA3031U
2002 Aug 13
31
Philips Semiconductors - a worldwide company
Contact information For additional information please visit http://www.semiconductors.philips.com. Fax: +31 40 27 24825 For sales offices addresses send e-mail to: sales.addresses@www.semiconductors.philips.com.
(c) Koninklijke Philips Electronics N.V. 2002
SCA74
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
403510/04/pp32
Date of release: 2002
Aug 13
Document order number:
9397 750 09948

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